Datasheet4U Logo Datasheet4U.com

SPI11N60S5 - N-Channel MOSFET

SPI11N60S5 Description

isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPI11N60S5 *.

SPI11N60S5 Features

* Static drain-source on-resistance: RDS(on) ≤3mΩ
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

SPI11N60S5 Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 22 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature -55~150 Tstg Storag

📥 Download Datasheet

Preview of SPI11N60S5 PDF
datasheet Preview Page 2

Datasheet Details

Part number
SPI11N60S5
Manufacturer
INCHANGE
File Size
256.39 KB
Datasheet
SPI11N60S5-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • SPI11N60C3 - Power Transistor (Infineon Technologies)
  • SPI11N65C3 - Power Transistor (Infineon Technologies)
  • SPI100N03S2-03 - OptiMOS Power-Transistor (Infineon Technologies)
  • SPI100N03S2L-03 - OptiMOS Power-Transistor (Infineon Technologies)
  • SPI10N10 - SIPMOS Power-Transistor (Infineon Technologies)
  • SPI10N10L - SIPMOS Power-Transistor (Infineon Technologies)
  • SPI12N50C3 - Power Transistor (Infineon Technologies)
  • SPI15N60C3 - Power Transistor (Infineon Technologies)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE SPI11N60S5-like datasheet