25Q128JVSM (Winbond)
3V 128M-BIT SERIAL FLASH MEMORY
W25Q128JV-DTR
3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI & DTR
Publication Release Date: November 4, 2016 -Revision B
W25Q128JV-DTR
Tab
(12 views)
25Q128FVSQ (Winbond)
3V 128M-BITSERIAL FLASH MEMORY
W25Q128FV
3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: May 13, 2016 Revision M
W25Q128FV
Table of Contents
1.
(8 views)
27C1001 (STMicroelectronics)
1 Mbit 128Kb x8 UV EPROM and OTP EPROM
M27C1001
1 Mbit (128Kb x8) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 35ns LOW POWER CONSUMPTION: – Active Curre
(7 views)
W25Q128JV (Winbond)
3V 128M-BIT SERIAL FLASH MEMORY
W25Q128JV
3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI
For Industrial & Industrial Plus Grade
Publication Release Date: April 08, 2019 Revision
(7 views)
25Q128FWSF (Winbond)
1.8V 128M-BIT SERIAL FLASH MEMORY
W25Q128FW
1.8V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: May 18, 2017 Revision K
W25Q128FW
Table of Contents
1.
(7 views)
XM25QH128A (XMC)
128 Megabit 3V Serial Flash Memory
XM25QH128A
XM25QH128A
preliminary
128 Megabit 3V Serial Flash Memory with 4Kbyte Uniform Sector
FEATURES
Single power supply operation - Full vo
(7 views)
M12L128168A-7BG2N (ESMT)
2M x 16 Bit x 4 Banks Synchronous DRAM
ESMT
SDRAM
FEATURES
y JEDEC standard 3.3V power supply y LVTTL compatible with multiplexed address y Four banks operation y MRS cycle with address key
(6 views)
F59L1G81MB-25BG2M (ESMT)
1 Gbit (128M x 8) 3.3V NAND Flash Memory
ESMT
Flash
FEATURES
Voltage Supply: 3.3V (2.7V~3.6V) Organization
- Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit Auto
(6 views)
25Q128FVPQ (Winbond)
3V 128M-BITSERIAL FLASH MEMORY
W25Q128FV
3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: May 13, 2016 Revision M
W25Q128FV
Table of Contents
1.
(6 views)
XM25QH128C (XMC)
3V 128M-BIT SERIAL FLASH MEMORY
XM25QH128C
3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
This Data Sheet may be revised by subsequent versions
1
or modifications due to
(6 views)
W25Q128FW (Winbond)
1.8V 128M-BIT SERIAL FLASH MEMORY
W25Q128FW
1.8V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: May 18, 2017 Revision K
W25Q128FW
Table of Contents
1.
(5 views)
K4S281632C-TP75 (Samsung semiconductor)
128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S281632C-TI(P)
CMOS SDRAM
128Mbit SDRAM
2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Revision 0.1 June 2001
* Samsung Electronics reserves the ri
(5 views)
K6X1008C2D (Samsung semiconductor)
128Kx8 bit Low Power CMOS Static RAM
K6X1008C2D Family
Document Title
128Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No. History
0.0 Initial draft
0.1 Revised - Deleted 32
(5 views)
K9K2G08Q0M-YIB0 (Samsung semiconductor)
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
K9K2G08U0M-VCB0,VIB0,FCB0,FIB0 K9K2G08Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G08U0M-YCB0,YIB0,PCB0,PIB0
K9K2G16Q0M-YCB0,YIB0,PCB0,PIB0 K9K2G16U0M-YCB0,YIB0,PCB0
(5 views)
UPD441000L-X (NEC)
1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD441000L-X
1M-BIT CMOS STATIC RAM 128K-WORD BY 8-BIT EXTENDED TEMPERATURE OPERATION
Description
The µPD441000L-
(5 views)
V54C3128804VE (ProMOS Technologies)
64Mbit SDRAM
w w w . D a t a S h e e t 4 U . c o m
V54C365(16/80/40)4VE 64Mbit SDRAM 3.3 VOLT, TSOP II / FBGA 4M X 16, 8M X 8, 16M X 4
6 System Frequency (fCK) C
(5 views)
K7N401801A (Samsung semiconductor)
(K7N401801A / K7N403601A) 128Kx36 & 256Kx18-Bit Pipelined NtRAMTM
K7N403601A K7N401801A
www.DataSheet4U.com
128Kx36 & 256Kx18 Pipelined NtRAMTM
Document Title
128Kx36 & 256Kx18-Bit Pipelined NtRAM TM
Revision Hist
(5 views)
TC531001CP (Toshiba Semiconductor)
1M BIT (128K WORD x 8 BIT) CMOS MASK ROM
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
www.DataSheet4U.com
(5 views)
M24L216128SA (Elite Semiconductor Memory Technology)
2-Mbit (128K x 16) Pseudo Static RAM
ESMT
PSRAM
Features
• Wide voltage range: 2.7V–3.6V • Access Time: 55 ns, 70 ns • Ultra-low active power — Typical active current: 1mA @ f = 1 MHz — T
(5 views)
W29GL128C (Winbond)
128M-BIT 3.0-VOLT PARALLEL FLASH MEMORY
W29GL128C 128M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
Publication Release Date: August 2, 2013 Revision H
BLANK
W29GL128C
Table of Conten
(5 views)