12GHZ Datasheet | Specifications & PDF Download

RF Low Noise FET CE3512K2 12 GHz Super Low Noise FET in Hollow Plastic PKG DESCRIPTION  Super Low Noise and High Gain  Hollow (Air Cavity) Plastic

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NBB-312 0 Typical Applications • Narrow and Broadband Commercial and Military Radio Designs • Linear and Saturated Amplifiers Product Description The

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RFUV1003 RFUV1003 12GHZ TO 16GHZ GAAS MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND I N/C N/C GND Q N/C 32 N/C GND LOIN G

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FEATURES ► Broadband RxVGA interfacing LNA and beamformer to RF ADC ► Operating frequency range: 0.38 GHz to 12 GHz, two product variants ► ADL6332-A:

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RF Low Noise FET CE3514M4 12GHz LoEwnteNroaiSsheoFrtEDTociunmDeunta/TlitMleoNladmPelHaesrteic PKG DESCRIPTION  Low Noise and High Gain  Original Du

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MLA-01122B-C4 1 - 12 GHz Packaged Low-Noise MMIC Amplifier FEATURES • Wideband: • NF: 1.0 to 12 GHz 1.3 dB @ 2.0 GHz 1.4 dB @ 6.0 GHz 1.9 dB @ 12.0

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CHA6105 RoHS COMPLIANT 8-12GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA6105 is a monolithic three-stage medium power amplifi

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CHA2110-98F 7-12GHz LNA GaAs Monolithic Microwave IC Description The CHA2110-98F is a monolithic two-stage wide band low noise amplifier circuit. I

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MAAM71200 Low Noise GaAs MMIC Power Amplifier 7.5 - 12.0 GHz Features • Noise Figure: 2.3 dB Typical • Gain: 16.5 dB Typical • Low Bias Current • Sing

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TC2623 12GHz Super Low Noise HEMT AlGaAs/GaAs Field Effect Transistor Description The TC2623 is a X/Ku band Schottky barrier High Electron Mobility Tr

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