Infineon Technologies
SPW12N50C3 - Cool MOS Power Transistor
Final data
SPW12N50C3
VDS @ Tjmax RDS(on) ID 560 0.38 11.6
P-TO247
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology •
Rating:
1
★
(7 votes)
INCHANGE
SPW12N50C3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to
Rating:
1
★
(6 votes)
INCHANGE
SPI12N50C3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche
Rating:
1
★
(5 votes)
Infineon Technologies
SPI12N50C3 - Power Transistor
SPP12N50C3 SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax
Rating:
1
★
(4 votes)
Vishay
12N50C - Power MOSFET
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Con
Rating:
1
★
(4 votes)
INCHANGE
SPA12N50C3 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
SPA12N50C3
·FEATURES ·With TO-220F Package ·Low input capacitance and gate charge ·Low gate i
Rating:
1
★
(4 votes)
Intersil Corporation
HGTH12N50C1 - N-Channel IGBT
HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1
April 1995
10A, 12A, 400V and 500V N-Channel IGBTs
Packages
HGTH-TYPES JEDEC TO-218AC
EM
Rating:
1
★
(3 votes)
Infineon Technologies
SPP12N50C3 - Power Transistor
SPP12N50C3 SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax
Rating:
1
★
(3 votes)
Vishay Siliconix
SIHB12N50C - Power MOSFET
www.DataSheet.co.kr
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Q
Rating:
1
★
(3 votes)
INCHANGE
SPP12N50C3 - N-Channel MOSFET
isc N-Channel MOSFET Transistor SPP12N50C3，ISPP12N50C3
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching
Rating:
1
★
(3 votes)
INCHANGE
SPB12N50C3 - N-Channel MOSFET
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D²PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive
Rating:
1
★
(3 votes)
Infineon Technologies
SPA12N50C3 - Power Transistor
SPP12N50C3 SPI12N50C3, SPA12N50C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax
Rating:
1
★
(2 votes)
Vishay Siliconix
SIHF12N50C - Power MOSFET
www.DataSheet.co.kr
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Q
Rating:
1
★
(2 votes)
Vishay Siliconix
SIHP12N50C - Power MOSFET
www.DataSheet.co.kr
SiHP12N50C, SiHB12N50C, SiHF12N50C
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) at TJ max. RDS(on) (Ω) Qg (Max.) (nC) Q
Rating:
1
★
(2 votes)
Infineon Technologies
SPB12N50C3 - Power Transistor
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate
Rating:
1
★
(1 votes)
