Datasheet Details
- Part number
- SPA12N50C3
- Manufacturer
- INCHANGE
- File Size
- 218.82 KB
- Datasheet
- SPA12N50C3-INCHANGE.pdf
- Description
- N-Channel MOSFET
SPA12N50C3 Description
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA12N50C3 *.
SPA12N50C3 Features
* With TO-220F Package
* Low input capacitance and gate charge
* Low gate input resistance
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
SPA12N50C3 Applications
* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous @Tc=25℃
11.6
(VGS at 10V)
Tc=100℃
7
A
IDM
Drain Current-Single Pulsed
34.8
A
PD
Total Dis
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