Datasheet4U Logo Datasheet4U.com

SPA1526Z

0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

SPA1526Z Features

* an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET

* InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT I

SPA1526Z General Description

RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stag.

SPA1526Z Datasheet (573.23 KB)

Preview of SPA1526Z PDF

Datasheet Details

Part number:

SPA1526Z

Manufacturer:

RFMD

File Size:

573.23 KB

Description:

0.7ghz to 2.2ghz 2w ingap hbt amplifier.
SPA1526Z 0.7GHz to 2.2GHz 2W InGaP HBT SPA1526ZAmplifier 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER NOT FOR NEW DESIGNS Package: SOF-26 NOT FOR NEW dB.

📁 Related Datasheet

SPA15N60C3 Cool MOS Power Transistor (Infineon Technologies)

SPA15N60C3 N-Channel MOSFET (INCHANGE)

SPA15N60CFD N-Channel MOSFET (INCHANGE)

SPA15N65C3 Power Transistor (Infineon Technologies)

SPA15N65C3 N-Channel MOSFET (INCHANGE)

SPA1118Z POWER AMPLIFIER (RF Micro Devices)

SPA11N60C2 Cool MOS Power Transistor (Infineon Technologies)

SPA11N60C3 Power Transistor (Infineon Technologies)

SPA11N60C3 N-Channel MOSFET (INCHANGE)

SPA11N60C3E8185 Power Transistor (Infineon Technologies)

TAGS

SPA1526Z 0.7GHz 2.2GHz InGaP HBT AMPLIFIER RFMD

Image Gallery

SPA1526Z Datasheet Preview Page 2 SPA1526Z Datasheet Preview Page 3

SPA1526Z Distributor