SPA1526Z Datasheet (RFMD) - 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

SPA1526Z, 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER

RFMD’s SPA1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier.

The SPA1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability.

It is well suited for use as a driver stag

SPA1526Z Features

* an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package. Optimum Technology Matching® Applied GaAs HBT GaAs MESFET

* InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT I