SPA1118Z POWER AMPLIFIER

RF Micro Devices

Description

SPA1118Z 850 MHz 1Watt Power Amplifier with Active Bias SPA1118Z 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product.
RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.

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SPA1118Z Datasheet Preview — Preview of SPA1118Z PDF

Datasheet Specifications

Part number: SPA1118Z
Manufacturer: RF Micro Devices
File Size: 253.15 KB
Datasheet: SPA1118Z-RFMicroDevices.pdf
Description: POWER AMPLIFIER

Features

* High Linearity Performance
* +21dBm IS-95 Channel Power at -55dBc ACP
* +48dBm OIP3 Typ.
* On-Chip Active Bias Control
* Patented High Reliability GaAs HBT Technology

Applications

* Optimum Technology Matching® Applied

SPA1118Z Distributors

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SPA1118Z POWER AMPLIFIER RF Micro Devices

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