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SPA1118Z

POWER AMPLIFIER

SPA1118Z Features

* High Linearity Performance

* +21dBm IS-95 Channel Power at -55dBc ACP

* +48dBm OIP3 Typ.

* On-Chip Active Bias Control

* Patented High Reliability GaAs HBT Technology

* Surface-Mountable Plastic Package Applications

* Multi-Carrier Applications

* AMPS, ISM Applicati

SPA1118Z General Description

RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wa.

SPA1118Z Datasheet (253.15 KB)

Preview of SPA1118Z PDF

Datasheet Details

Part number:

SPA1118Z

Manufacturer:

RF Micro Devices

File Size:

253.15 KB

Description:

Power amplifier.
SPA1118Z 850 MHz 1Watt Power Amplifier with Active Bias SPA1118Z 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product.

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TAGS

SPA1118Z POWER AMPLIFIER RF Micro Devices

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