SPA1118Z - POWER AMPLIFIER
RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.
These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wa
SPA1118Z Features
* High Linearity Performance
* +21dBm IS-95 Channel Power at -55dBc ACP
* +48dBm OIP3 Typ.
* On-Chip Active Bias Control
* Patented High Reliability GaAs HBT Technology
* Surface-Mountable Plastic Package Applications
* Multi-Carrier Applications
* AMPS, ISM Applicati