SPA1118Z Datasheet - RF Micro Devices

SPA1118Z POWER AMPLIFIER

RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wa.

SPA1118Z Features

* High Linearity Performance

* +21dBm IS-95 Channel Power at -55dBc ACP

* +48dBm OIP3 Typ.

* On-Chip Active Bias Control

* Patented High Reliability GaAs HBT Technology

* Surface-Mountable Plastic Package Applications

* Multi-Carrier Applications

* AMPS, ISM Applicati

SPA1118Z-RFMicroDevices.pdf

SPA1118Z Datasheet Preview — Preview of SPA1118Z PDF

Datasheet Details

Part number:

SPA1118Z

Manufacturer:

RF Micro Devices

File Size:

253.15 KB

Description:

Power amplifier.

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SPA1118Z SPA1118Z POWER AMPLIFIER RF Micro Devices

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