SPA1118Z Datasheet - RF Micro Devices

SPA1118Z POWER AMPLIFIER

RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wa.

SPA1118Z Features

* High Linearity Performance

* +21dBm IS-95 Channel Power at -55dBc ACP

* +48dBm OIP3 Typ.

* On-Chip Active Bias Control

* Patented High Reliability GaAs HBT Technology

* Surface-Mountable Plastic Package Applications

* Multi-Carrier Applications

* AMPS, ISM Applicati

SPA1118Z Datasheet (253.15 KB)

SPA1118Z Datasheet Preview — Preview of SPA1118Z PDF

Datasheet Details

Part number:

SPA1118Z

Manufacturer:

RF Micro Devices

File Size:

253.15 KB

Description:

Power amplifier.

📁 Related Datasheet

SPA11N60C2 Cool MOS Power Transistor (Infineon Technologies)

SPA11N60C3 Power Transistor (Infineon Technologies)

SPA11N60C3 N-Channel MOSFET (INCHANGE)

SPA11N60C3E8185 Power Transistor (Infineon Technologies)

SPA11N60C3E8185 N-Channel MOSFET (INCHANGE)

SPA11N60CFD CoolMOS Power Transistor (Infineon Technologies)

SPA11N60CFD N-Channel MOSFET (INCHANGE)

SPA11N65C3 N-Channel MOSFET (INCHANGE)

SPA11N65C3 Power Transistor (Infineon Technologies)

SPA11N80C3 Power Transistor (Infineon Technologies)

TAGS

SPA1118Z POWER AMPLIFIER RF Micro Devices

Image Gallery

SPA1118Z Distributor