SPA1118Z Datasheet, Amplifier, RF Micro Devices

SPA1118Z Features

• Amplifier
• High Linearity Performance
• +21dBm IS-95 Channel Power at -55dBc ACP
• +48dBm OIP3 Typ.
• On-Chip Active Bias Control
• Patented High Reliabil

PDF File Details

Part number:

SPA1118Z

Manufacturer:

RF Micro Devices

File Size:

253.15kb

Download:

📄 Datasheet

Description:

Power amplifier. RFMD’s SPA1118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable pl

SPA1118Z Application

• Applications Optimum Technology Matching® Applied
• GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJ

TAGS

SPA1118Z

RF Micro Devices

📁 Related Datasheet

SPA11N60C2 - Cool MOS Power Transistor (Infineon Technologies)
Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge .

SPA11N60C3 - Power Transistor (Infineon Technologies)
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate c.

SPA11N60C3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved tr.

SPA11N60C3E8185 - Power Transistor (Infineon Technologies)
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate c.

SPA11N60C3E8185 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor SPA11N60C3E8185，SPA11N60C3E8185 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast.

SPA11N60CFD - CoolMOS Power Transistor (Infineon Technologies)
SPA11N60CFD CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reve.

SPA11N60CFD - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.

SPA11N65C3 - N-Channel MOSFET (INCHANGE)
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source O.

SPA11N65C3 - Power Transistor (Infineon Technologies)
Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.

SPA11N80C3 - Power Transistor (Infineon Technologies)
CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor.