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SPA2118Z POWER AMPLIFIER

SPA2118Z Description

SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias SPA2118Z 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Produc.
RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.

SPA2118Z Features

* High Linearity Performance
* +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP
* +47dBm Typ. OIP3
* High Gain: 33dB Typ.
* On-Chip Active Bias Control
* Patented high Reliability GaAs HBT Technology

SPA2118Z Applications

* Optimum Technology Matching® Applied

📥 Download Datasheet

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Datasheet Details

Part number
SPA2118Z
Manufacturer
RF Micro Devices
File Size
324.89 KB
Datasheet
SPA2118Z-RFMicroDevices.pdf
Description
POWER AMPLIFIER

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POWER AMPLIFIER RF Micro Devices
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