SPA2118Z POWER AMPLIFIER

RF Micro Devices

Description

SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias SPA2118Z 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Produc.
RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.

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Datasheet Specifications

Part number: SPA2118Z
Manufacturer: RF Micro Devices
File Size: 324.89 KB
Datasheet: SPA2118Z-RFMicroDevices.pdf
Description: POWER AMPLIFIER

Features

* High Linearity Performance
* +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP
* +47dBm Typ. OIP3
* High Gain: 33dB Typ.
* On-Chip Active Bias Control
* Patented high Reliability GaAs HBT Technology

Applications

* Optimum Technology Matching® Applied

SPA2118Z Distributors

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SPA2118Z POWER AMPLIFIER RF Micro Devices

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