SPA2118Z Datasheet, Amplifier, RF Micro Devices

SPA2118Z Features

• Amplifier
• High Linearity Performance
• +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP
• +47dBm Typ. OIP3
• High Gain: 33dB Typ.
• On-Chip Active Bias C

PDF File Details

Part number:

SPA2118Z

Manufacturer:

RF Micro Devices

File Size:

324.89kb

Download:

📄 Datasheet

Description:

Power amplifier. RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable pl

SPA2118Z Application

• Applications Optimum Technology Matching® Applied
• GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJ

TAGS

SPA2118Z

RF Micro Devices

📁 Related Datasheet

SPA21N50C3 - N-Channel MOSFET (INCHANGE)
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on).

SPA21N50C3 - Power Transistor (Infineon Technologies)
SPP21N50C3 SPI21N50C3, SPA21N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • .

SPA20N60C2 - Cool MOS Power Transistor (Infineon Technologies)
Final data SPP20N60C2, SPB20N60C2 SPA20N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on.

SPA20N60C3 - Cool MOS Power Transistor (Infineon Technologies)
633 1 & 63, 1 & 63$ 1 & &RRO026Œ 3RZHU7UDQVLVWRU )HDWXUH • 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ •:RUOGZLGHEHVW5'6RQLQ72  •.

SPA20N60C3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved tr.

SPA20N60CFD - Power Transistor (Infineon Technologies)
SPA20N60CFD CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reve.

SPA20N60CFD - N-Channel MOSFET (INCHANGE)
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA20N60CFD ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate .

SPA20N65C3 - Cool MOS Power Transistor (Infineon Technologies)
SPP20N65C3, SPA20N65C3 SPI20N65C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 •.

SPA20N65C3 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F packaging ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current.

SPA2318Z - POWER AMPLIFIER (RF Micro Devices)
SPA2318ZLow Noise, High Gain SiGe HBT SPA2318Z 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Descriptio.