SPA2118Z - POWER AMPLIFIER
RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.
These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wa
SPA2118Z Features
* High Linearity Performance
* +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP
* +47dBm Typ. OIP3
* High Gain: 33dB Typ.
* On-Chip Active Bias Control
* Patented high Reliability GaAs HBT Technology
* Surface-Mountable Plastic Package Applications
* IS-95 CDMA System
