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SPA2118Z

POWER AMPLIFIER

SPA2118Z Features

* High Linearity Performance

* +20.7dBm, IS-95 CDMA Channel Power at -55dBc ACP

* +47dBm Typ. OIP3

* High Gain: 33dB Typ.

* On-Chip Active Bias Control

* Patented high Reliability GaAs HBT Technology

* Surface-Mountable Plastic Package Applications

* IS-95 CDMA System

SPA2118Z General Description

RFMD’s SPA2118Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wa.

SPA2118Z Datasheet (324.89 KB)

Preview of SPA2118Z PDF

Datasheet Details

Part number:

SPA2118Z

Manufacturer:

RF Micro Devices

File Size:

324.89 KB

Description:

Power amplifier.
SPA2118Z 850MHz 1 Watt Power Amplifier with Active Bias SPA2118Z 850MHz 1 WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Produc.

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SPA2118Z POWER AMPLIFIER RF Micro Devices

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