Datasheet4U.com

SPA20N60CFD - Power Transistor

Infineon Technologies

📥 Download Datasheet

SPA20N60CFD Datasheet Preview — Preview of SPA20N60CFD PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	SPA20N60CFD
Manufacturer	Infineon ↗ Technologies
File Size	0.98 MB
Description	Power Transistor
Datasheet	SPA20N60CFD-InfineonTechnologies.pdf

SPA20N60CFD Product details

Description

and charts stated herein.

Features

New revolutionary high voltage technology.
Intrinsic fast-recovery body diode.
Extremely low reverse recovery charge Product Summary VDS RDS(on),max ID1) 600 V 0.22 W 20.7 A.
Ultra low gate charge.
Extreme dv /dt rated PG-TO220-3-31.
High peak current capability.
Periodic avalanche rated.
Qualified for industrial grade.

📁 SPA20N60CFD Similar Datasheet

SPA2118Z - POWER AMPLIFIER (RF Micro Devices)
SPA21N50C3 - N-Channel MOSFET (INCHANGE)
SPA2318Z - POWER AMPLIFIER (RF Micro Devices)
SPA2410LR5H-B - Microphone (Knowles Acoustics)
SPA-0701-25 - SURFACE MOUNT 2-WAY SPLITTER (PDI)
SPA-1118 - Power Amplifier (Sirenza Microdevices)
SPA-1118Z - Power Amplifier (Sirenza Microdevices)
SPA-1218 - Power Amp (Stanford Microdevices)

Other Datasheets by Infineon Technologies

SPA20N60C2 - Cool MOS Power Transistor
SPA20N60C3 - Cool MOS Power Transistor
SPA20N65C3 - Cool MOS Power Transistor
SPA02N80C3 - Power Transistor
SPA03N60C3 - Power Transistor
SPA04N50C3 - Cool MOS& Power Transistor

Published: Nov 14, 2015 |