SPA2318Z - POWER AMPLIFIER
RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.
These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer t
SPA2318Z Features
* High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP3
* On-Chip Active Bias Control
* High Gain: 24dB Typ. at 1960 MHz
* Patented High Reliability GaAs HBT Technology
* Surface-Mountable Plastic Packag
