SPA2318Z POWER AMPLIFIER

RF Micro Devices

Description

SPA2318ZLow Noise, High Gain SiGe HBT SPA2318Z 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Descriptio.
RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.

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SPA2318Z Datasheet Preview — Preview of SPA2318Z PDF

Datasheet Specifications

Part number: SPA2318Z
Manufacturer: RF Micro Devices
File Size: 382.52 KB
Datasheet: SPA2318Z-RFMicroDevices.pdf
Description: POWER AMPLIFIER

Features

* High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP3
* On-Chip Active Bias Control
* High Gain: 24dB Typ. at 1960 MHz
* Patented High Reliability GaAs HBT Technology
* Surface-Mountable Plastic Packag

Applications

* The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker forma- Optimum Technology Matching® Applied
* GaAs HBT tion and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain

SPA2318Z Distributors

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