SPA2318Z Datasheet, Amplifier, RF Micro Devices

✔ SPA2318Z Features

High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP3
On-Chip Active Bias Control
High

The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker fo

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SPA2318Z

RF Micro Devices

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Power amplifier. RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable

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RF Micro Devices Inc

IC AMP W-CDMA 1.7-2.2GHZ 8SOIC

SPA-2318Z

0 In Stock

Unit Price : $0

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SPA2318Z POWER AMPLIFIER RF Micro Devices