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SPA2318Z POWER AMPLIFIER

SPA2318Z Description

SPA2318ZLow Noise, High Gain SiGe HBT SPA2318Z 1700MHz to 2200MHz 1 WATT POWER AMP WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product Descriptio.
RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.

SPA2318Z Features

* High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP3
* On-Chip Active Bias Control
* High Gain: 24dB Typ. at 1960 MHz
* Patented High Reliability GaAs HBT Technology
* Surface-Mountable Plastic Packag

SPA2318Z Applications

* The matte tin finish on the lead-free package utilizes a post annealing process to mitigate tin whisker forma- Optimum Technology Matching® Applied
* GaAs HBT tion and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain

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Datasheet Details

Part number
SPA2318Z
Manufacturer
RF Micro Devices
File Size
382.52 KB
Datasheet
SPA2318Z-RFMicroDevices.pdf
Description
POWER AMPLIFIER

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POWER AMPLIFIER RF Micro Devices
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