SPA2318Z Datasheet - RF Micro Devices

SPA2318Z POWER AMPLIFIER

RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer t.

SPA2318Z Features

* High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP3

* On-Chip Active Bias Control

* High Gain: 24dB Typ. at 1960 MHz

* Patented High Reliability GaAs HBT Technology

* Surface-Mountable Plastic Packag

SPA2318Z-RFMicroDevices.pdf