SPA2318Z - POWER AMPLIFIER

RF Micro Devices

SPA2318Z Datasheet Preview — Preview of SPA2318Z PDF

Datasheet Details

Part number	SPA2318Z
Manufacturer	RF Micro Devices
File Size	382.52 KB
Description	POWER AMPLIFIER
Datasheet	SPA2318Z-RFMicroDevices.pdf

SPA2318Z Product details

Description

RFMD’s SPA2318Z is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package.These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot.This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 1960MHz and 2140MHz bands.Its high linearity makes it an ideal choic

Features

High Linearity Performance: +21dBm IS-95 Channel Power at -55dBc ACP; +20.7dBm WCDMA Channel Power at -50dBc ACP; +47dBm Typ. OIP3.
On-Chip Active Bias Control.
High Gain: 24dB Typ. at 1960 MHz.
Patented High Reliability GaAs HBT Technology.
Surface-Mountable Plastic Package.

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Published: Apr 1, 2016 |