SPA11N60C3E8185
Infineon ↗ Technologies
678.27kb
Power transistor.
TAGS
📁 Related Datasheet
SPA11N60C3E8185 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
SPA11N60C3E8185,SPA11N60C3E8185
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.38Ω ·Enhancement mode ·Fast.
SPA11N60C3 - Power Transistor
(Infineon Technologies)
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate c.
SPA11N60C3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved tr.
SPA11N60C2 - Cool MOS Power Transistor
(Infineon Technologies)
Final data
SPP11N60C2, SPB11N60C2 SPA11N60C2
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge .
SPA11N60CFD - CoolMOS Power Transistor
(Infineon Technologies)
SPA11N60CFD
CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reve.
SPA11N60CFD - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.
SPA11N65C3 - N-Channel MOSFET
(INCHANGE)
INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F Package ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source O.
SPA11N65C3 - Power Transistor
(Infineon Technologies)
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rate.
SPA11N80C3 - Power Transistor
(Infineon Technologies)
CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak current capability • Qualified accor.
SPA11N80C3 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved tr.
Stock and price