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SPA17N80C3 N-Channel MOSFET

SPA17N80C3 Description

isc N-Channel MOSFET Transistor *.

SPA17N80C3 Features

* Static drain-source on-resistance: RDS(on) ≤0.29Ω
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SPA17N80C3 Applications

* Ideal for high-frequency switching and synchronous rectification
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 800 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 17 IDM Drain Current-Single Pulsed 51 PD Total Dissipation @TC=25

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Datasheet Details

Part number
SPA17N80C3
Manufacturer
INCHANGE
File Size
242.41 KB
Datasheet
SPA17N80C3-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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