INCHANGE manufacturer logo and representative part image Part number: SPA17N80C3 Manufacturer: INCHANGE File Size: 242.41kb Download: 📄 Datasheet Description: N-channel mosfet.
SPA17N80C3 - Cool MOS Power Transistor (Infineon Technologies) SPP17N80C3 SPA17N80C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low g.
SPA1118Z - POWER AMPLIFIER (RF Micro Devices) SPA1118Z 850 MHz 1Watt Power Amplifier with Active Bias SPA1118Z 850MHz 1WATT POWER AMPLIFIER WITH ACTIVE BIAS Package: Exposed Pad SOIC-8 Product.
SPA11N60C2 - Cool MOS Power Transistor (Infineon Technologies) Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge .
SPA11N60C3 - Power Transistor (Infineon Technologies) SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate c.
SPA11N60C3 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor ·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak current capability ·Improved tr.
SPA11N60C3E8185 - Power Transistor (Infineon Technologies) SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate c.
SPA11N60C3E8185 - N-Channel MOSFET (INCHANGE) isc N-Channel MOSFET Transistor SPA11N60C3E8185，SPA11N60C3E8185 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast.
SPA11N60CFD - CoolMOS Power Transistor (Infineon Technologies) SPA11N60CFD CoolMOSTM Power Transistor Features • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reve.
SPA11N60CFD - N-Channel MOSFET (INCHANGE) Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Low gate input resistance ·Reduced switching a.
SPA11N65C3 - N-Channel MOSFET (INCHANGE) INCHANGE Semiconductor Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F Package ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source O.
