SPA16N50C3 N-Channel MOSFET

INCHANGE

Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA16N50C3 *.

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Datasheet Specifications

Part number: SPA16N50C3
Manufacturer: INCHANGE
File Size: 245.20 KB
Datasheet: SPA16N50C3-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain-source on-resistance: RDS(on) ≤ 250mΩ@10V
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 16 10 A IDM Drain Current-Single Pulsed 48 A PD Total Dissipa

SPA16N50C3 Distributors

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SPA16N50C3 N-Channel MOSFET INCHANGE

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