Datasheet4U Logo Datasheet4U.com

SPA16N50C3 N-Channel MOSFET

SPA16N50C3 Description

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA16N50C3 *.

SPA16N50C3 Features

* Drain-source on-resistance: RDS(on) ≤ 250mΩ@10V
* Reduced switching and conduction losses
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

SPA16N50C3 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 10V) Tc=100℃ 16 10 A IDM Drain Current-Single Pulsed 48 A PD Total Dissipa

📥 Download Datasheet

Preview of SPA16N50C3 PDF
datasheet Preview Page 2

Datasheet Details

Part number
SPA16N50C3
Manufacturer
INCHANGE
File Size
245.20 KB
Datasheet
SPA16N50C3-INCHANGE.pdf
Description
N-Channel MOSFET

📁 Related Datasheet

  • SPA1118Z - POWER AMPLIFIER (RF Micro Devices)
  • SPA11N60C2 - Cool MOS Power Transistor (Infineon Technologies)
  • SPA11N60C3 - Power Transistor (Infineon Technologies)
  • SPA11N60C3E8185 - Power Transistor (Infineon Technologies)
  • SPA11N60CFD - CoolMOS Power Transistor (Infineon Technologies)
  • SPA11N80C3 - Power Transistor (Infineon Technologies)
  • SPA1526Z - 0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER (RFMD)
  • SPA15N60C3 - Cool MOS Power Transistor (Infineon Technologies)

📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE SPA16N50C3-like datasheet