12N90-C Datasheet | Specifications & PDF Download

UNISONIC TECHNOLOGIES CO., LTD 12N90 12A, 900V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 12N90 is an N-channel enhancement mode powe

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UNISONIC TECHNOLOGIES CO., LTD 12N90-C 12A, 900V N-CHANNEL POWER MOSFET  DESCRIPTION 1 The UTC 12N90-C is a N-channel mode power MOSFET using UTC

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM10N90 IXFH/IXFM12N90 IXFH13N90 V DSS 900 V 900 V 90

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 12N90 ·FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltag

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance :

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V

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www.DataSheet4U.com Advanced Technical Information HiPerFASTTM IGBT LightspeedTM Series IXGH 12N90C VCES = 900 V = 24 A IC25 VCES(sat) = 3.0 V tfi

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Static Drain-Source On-Resistance :

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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH/IXFM 10 N90 IXFH/IXFM 12 N90 IXFH13 N90 900 V 900 V

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