132-CHANNEL Datasheet | Specifications & PDF Download

® VITESSE SEMICONDUCTOR CORPORATION Preliminary Data Sheet VSC7132 Features • Replicates Fibre Channel, Gigabit Ethernet and HDTV Links • T11 Fibre

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRLB4132 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·M

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD13201W10 SLPS306A – MAY 2012 – REVISED SEPTEMBER 2015 CSD

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AOZ1325DI Dual Channel Load Switch with Controlled Slew Rate General Description The AOZ1325DI is a P-channel high-side load switch with slew rates o

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=900V(Min) ·Minimum Lot-to-Lot variations for

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SSF1320N Elektronische Bauelemente 2A , 20V , RDS(ON) 58 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halog

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AONR21321 30V P-Channel MOSFET General Description • Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Fre

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INTEGRATED CIRCUITS DATA SHEET UDA1328T Multi-channel filter DAC Product specification Supersedes data of 2000 Jan 04 File under Integrated Circuits,

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Analog Power N-Channel 20V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to

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AOD4132 30v N-Channel MOSFET General Description The AOD4132 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low ga

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UNISONIC TECHNOLOGIES CO., LTD ULB4132 78A, 30V N-CHANNEL POWER MOSFET  DESCRIPTION The ULB4132 uses advanced trench technology to provide excellent

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InterFET Product Folder Technical Support Order Now IF1322-A IF1322, IF1322A Dual Matched N-Channel JFET Features • InterFET N0132L Geometry • L

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InterFET Product Folder Technical Support Order Now IF1322-A IF1322, IF1322A Dual Matched N-Channel JFET Features • InterFET N0132L Geometry • L

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AOSP21321 30V P-Channel MOSFET General Description • Latest Advanced Trench Technology • Low RDS(ON) • High Current Capability • RoHS and Halogen-Fre

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D4132-VB D4132-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.002 at VGS = 10 V 0.003 at VGS =

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ZVP1320FTA-VB ZVP1320FTA-VB Datasheet P-Channel 200V (D-S)MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) - 200 RDS(on) ( ) 0.8 at VGS = - 10 V 0.9

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Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and

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FEATURES Dual 80 MSPS, minimum sample rate Channel-to-channel matching, ±1% gain error 90 dB channel-to-channel isolation DC-coupled signal conditioni

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