TPC8132 - Silicon P-Channel MOSFET
TPC8132 Features
* (1) (2) (3) (4) Small footprint due to small and thin package Low drain-source on-resistance: RDS(ON) = 20 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: So
