* (1) (2) (3) (4) Small footprint due to small and thin package Low drain-source on-resistance: RDS(ON) = 20 mΩ (typ.) (VGS = -10 V) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 1, 2, 3: So
TPC8132
Toshiba ↗ Semiconductor
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Silicon p-channel mosfet.
TPC8132
MOSFETs Silicon P-Channel MOS (U-MOS)
TPC8132
1. Applications
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* Lithium-Ion Secondary Batteries Power Management Switches
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