TPC8102 - P-Channel MOSFET
TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π MOSVI) TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package Low drain source ON resistance : RDS (ON) = 34 mΩ (typ.) High forward transfer admittance : |Yfs| = 9 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode : Vth = 0.8~ 2.0 V (VDS = 10 V, ID =
