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TPC8102 Datasheet - Toshiba Semiconductor

TPC8102 P-Channel MOSFET

TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π MOSVI) TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Small footprint due to small and thin package Low drain source ON resistance : RDS (ON) = 34 mΩ (typ.) High forward transfer admittance : |Yfs| = 9 S (typ.) Low leakage current : IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode : Vth = 0.8~ 2.0 V (VDS = 10 V, ID =

TPC8102_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

TPC8102

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

471.76 KB

Description:

P-channel mosfet.

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TPC8102 TPC8102 P-Channel MOSFET Toshiba Semiconductor

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