TPC8108 Datasheet - Toshiba Semiconductor

TPC8108 P-Channel MOSFET

TPC8108 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8108 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 9.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 24 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-mode: Vth = 0.8 to <.

TPC8108 Features

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TPC8108_ToshibaSemiconductor.pdf