TPC8107 - P-Channel MOSFET
TPC8107 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) TPC8107 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 5.5 mΩ (typ.) High forward transfer admittance: |Yfs| = 31 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement-mode: Vth = 0.8 to 2.0 V (VDS =
