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TPC8129 Datasheet - Toshiba

TPC8129 Silicon P-Channel MOSFET

TPC8129 Features

* (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 17 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -30 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit TPC8129 1

TPC8129_Toshiba.pdf

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Datasheet Details

Part number:

TPC8129

Manufacturer:

Toshiba ↗

File Size:

259.92 KB

Description:

Silicon p-channel mosfet.

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TPC8129 TPC8129 Silicon P-Channel MOSFET Toshiba

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