TPC8120 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) TPC8120 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 2.6 mΩ (typ.) High forward transfer admittance: |Yfs| =80 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 0.8 to 2.0 V (
TPC8120_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
TPC8120
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
299.55 KB
Description:
Silicon p-channel mosfet.