TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) www.DataSheet4U.com TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 0.8 to
TPC8123_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
TPC8123
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
297.15 KB
Description:
P-channel mosfet.