TPC8123 Datasheet - Toshiba Semiconductor

TPC8123 P-Channel MOSFET

TPC8123 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅥ) www.DataSheet4U.com TPC8123 Lithium Ion Battery Applications Power Management Switch Applications Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) = 7.0 mΩ (typ.) High forward transfer admittance: |Yfs| = 36 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 0.8 to

TPC8123 Features

* not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.

* Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction o

TPC8123 Datasheet (297.15 KB)