* (1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 39 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA) 3. Packaging and Internal Circuit TPC8134 1,
TPC8134
Toshiba ↗ Semiconductor
264.94 KB
Silicon p-channel mosfet.
MOSFETs Silicon P-Channel MOS (U-MOS)
TPC8134
1. Applications
* Lithium-Ion Secondary Batteries
* Power Management Switches
2. Featur.
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