I5141-TG (iCreate)
SD/MMC Memory Card Controller
i5141-TG
i5141-TG
SD/MMC Memory Card Controller Datasheet
Version 1.1
iCreate Technologies Corporation 2006/9/28
© 2006 iCreate Technologies Corpora
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CXD104-114Q (ETC)
C-MOS MEMORY SEQUENCER
CXD104-114Q (1/3) IL08D
C-MOS MEMORY SEQUENCER (WRITE V CONTROL, VISC CONTROL)
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P1480 (Zarlink Semiconductor Inc)
LAN CAM 1KX64 BIT CMOS CONTENT ADDRESSABLE MEMORY
Obsolescence Notice
This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete pro
(38 views)
AT49F1614 (ATMEL)
16-megabit 5-volt Only Flash Memory
Features
• 4.5V to 5.5V Read/Write • Access Time – 90 ns • Sector Erase Architecture
– Thirty 32K Word (64K byte) Sectors with Individual Write Lockou
(37 views)
LH28F320S3-L14 (Sharp Electrionic Components)
32-MBIT(4MBx8/2MBx16)Smart 3 Flash MEMORY
LH28F320S3-L11/14 32M, Smart3, Flash, Flash File, CFI, ETOX, Non Volatile
(36 views)
MC145416 (Motorola)
Tone/Pulse dialler with 10-number memory plus 3 emergency numbers
(35 views)
AK532256AW (ACCUTEK)
262144 Word by 32 Bit CMOS Dynamic Random Access Memory
MICROCIRCUIT CORPORATION
DESCRIPTION
The Accutek AK532256AW high density memory module is a CMOS dynamic RAM organized in 265K x 32 bit words. The mod
(34 views)
NE57814 (Philipss)
DDR memory termination regulator with standby mode and enhanced efficiency
INTEGRATED CIRCUITS
NE57814 DDR memory termination regulator with standby mode and enhanced efficiency
Product data Supersedes data of 2003 Jan 22 20
(33 views)
HM514280A (Renesas Technology)
18-bit Dynamic Random Access Memory
(33 views)
HM514260AL (Hitachi Semiconductor)
16-Bit Dynamic Random Access Memory
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(33 views)
MX35LF2G14AC (Macronix)
2G-bit Serial NAND Flash Memory
MX35LF2G14AC
3V, 2G-bit Serial NAND Flash Memory
MX35LF2G14AC
P/N: PM2513
REV. 1.0, June 19, 2017 1
MX35LF2G14AC
Contents
1. FEATURES
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AT49BV1614A (ATMEL)
16-megabit (1M x 16/2M x 8) 3-volt Only Flash Memory
Features
• Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture
– Thirty-one 3
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NEXG474Z5.5V14.5X18F (NIC)
Memory Back-Up Capacitors
Memory Back-Up Capacitors
FEATURES RoHS • DOUBLE LAYER CONSTRUCTION Compliant • HIGH CURRENT DISCHARGE (UP TO 500μA) includes all homogeneous material
(32 views)
NTE21256 (NTE)
262 /144-Bit Dynamic Random Access Memory (DRAM)
(32 views)
AV-14FM (JVC)
Replacement of Memory ICs
(32 views)
HM514260A (Hitachi Semiconductor)
16-Bit Dynamic Random Access Memory
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NEXT224Z5.5V14.5X12F (NIC)
Memory Back-Up Capacitors
Memory Back-Up Capacitors
FEATURES • SMALLER THAN NEXA SERIES • DOUBLE LAYER CONSTRUCTION • SHORT TERM POWER SOURCE (UP TO 50mA) • SUITABLE FOR FLOW S
(31 views)
HM9114 (Hualon Microelectronics)
Tone / Pulse Switchable and 15 Memory Dialer
(31 views)
MT28C3214P2NFL (Micron Technology)
FLASH AND SRAM COMBO MEMORY
2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY
FLASH AND SRAM COMBO MEMORY
FEATURES
• Flexible dual-bank architecture • Support for true concurren
(31 views)
AT49LV1614A (ATMEL Corporation)
16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory
Features
• Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • • • • •
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