MT28C3214P2NFL Datasheet PDF - Micron Technology FLASH AND SRAM COMBO MEMORY Specs

MT28C3214P2NFL - FLASH AND SRAM COMBO MEMORY

This page provides the datasheet information for the MT28C3214P2NFL, a member of the MT28C3214P2FL FLASH AND SRAM COMBO MEMORY family.

Datasheet Summary

Description

The MT28C3214P2FL and MT28C3214P2NFL combination Flash and SRAM memory devices provide a compact, low-power solution for systems where PCB real estate is at a premium.

Features

Flexible dual-bank architecture.
Support for true concurrent operations with no latency: Read bank b during program bank a and vice versa Read bank b during erase bank a and vice versa.
Organization: 2,048K x 16 (Flash) 256K x 16 (SRAM).
Basic configuration: Flash Bank a (4Mb Flash for data storage).
Eight 4K-word parameter blocks.
Seven 32K-word blocks Bank b (28Mb Flash for program storage).
Fifty-six 32K-word main blocks SRAM 4Mb.

Datasheet Details

Part number	MT28C3214P2NFL
Manufacturer	Micron Technology
File Size	520.14 KB
Description	FLASH AND SRAM COMBO MEMORY
Datasheet	MT28C3214P2NFL Datasheet
Additional preview pages of the MT28C3214P2NFL datasheet.

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Full PDF Text Transcription

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2 MEG x 16 PAGE FLASH 256K x 16 SRAM COMBO MEMORY FLASH AND SRAM COMBO MEMORY FEATURES • Flexible dual-bank architecture • Support for true concurrent operations with no latency: Read bank b during program bank a and vice versa Read bank b during erase bank a and vice versa • Organization: 2,048K x 16 (Flash) 256K x 16 (SRAM) • Basic configuration: Flash Bank a (4Mb Flash for data storage) – Eight 4K-word parameter blocks – Seven 32K-word blocks Bank b (28Mb Flash for program storage) – Fifty-six 32K-word main blocks SRAM 4Mb SRAM for data storage – 256K-words • F_VCC, VCCQ, F_VPP, S_VCC voltages1 1.65V (MIN)/1.95V (MAX) F_VCC read voltage or 1.80V (MIN)/2.20V (MAX) F_VCC read voltage 1.65V (MIN)/1.95V (MAX) S_VCC read voltage or 1.80V (MIN)/2.20V (MAX) S_VCC read voltage 1.65V (MIN)/1.

Published: Dec 13, 2005 |