1480 Datasheet | Specifications & PDF Download

Absolute maximum ratings　（Tc = 25℃ unless otherwise specified ） MOSFET Module Shindengen Electric Manufacturing Co., Ltd. Electrical and thermal char

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Obsolescence Notice This product is obsolete. This information is available for your convenience only. For more information on Zarlink’s obsolete pro

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DATA SHEET O K I L A S E R P R O D U C T S OL4201N Service Channel FP Laser Module (1480 nm, 1 mW) October 1999 s s ––––––––––––––––––––––––––––––––

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CGHV14800F 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transist

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NDP1480QB 8A,40V High Efficiency Synchronous Step-Down DC/DC Converter Description Features Z NDP1480QB is a high efficiency,  Wide VIN Range :

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CGHV14800 800 W, 960 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Description Wolfspeed’s CGHV14800 is a gallium nitride (GaN) high electron mo

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Ω μ 8ZKSW M]ZZOW\ = 7 H5I 7YJRV L\YYNV[ < 7 H5I D_XRLJT W\[X\[ LQJYJL[NYRZ[RLZ @\TZN UNJZ\YNUNV[ +2/ +1) +-) E9C4 *)E E9C4 1E +)) E9C4 /E */)

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DATA SHEET O K I F I B E R O P T I C P R O D U C T S OL4121N-120 and OL4121N-140 High-Power Laser Diode Butterfly Modules (1480 nm, 120 mW/140 mW) Feb

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Data Sheet LANCAM B Family APPLICATION BENEFITS DISTINCTIVE CHARACTERISTICS • New low-cost LANCAM family in a space-saving • High density CMOS Con

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Power Transistors 2SD1480 Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB1052 Unit: mm 0.7±0.1 10.0±0.2 5.5±0.2

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DATA SHEET O K I F I B E R O P T I C P R O D U C T S OL4121N-120 and OL4121N-140 High-Power Laser Diode Butterfly Modules (1480 nm, 120 mW/140 mW) Feb

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2ST1480 2ST2480 Complementary power transistors Preliminary data Features ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain ch

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Alfa-MOS Technology General Description AFN1480, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low

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INTEGRATED CIRCUITS DIVISION Features • CMOS Technology • +/-15 Volt Output Driver Supply Voltage • Drives Segment or Active Matrix Displays • 4-Level

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CGHV14800 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transisto

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EVALUATION KIT AVAILABLE MAX14808 / MAX14809 Octal Three-Level/Quad Five-Level High-Voltage 2A Digital Pulsers with T/R Switch General Description T

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PRELIMINARY CY7C1480V33 CY7C1482V33 CY7C1486V33 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM Features • Supports bus operation up to 250 MH

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ADVANCED LINEAR DEVICES, INC. e TM EPAD ® ENAB L E D ALD114804A/ALD114804/ALD114904A/ALD114904 QUAD/DUAL N-CHANNEL DEPLETION MODE EPAD® PRECIS

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High Current Power Inductor CSCM1480H Series Outline: Magnetic shielding structure, excellent resistance to electro magnetic interference. Flat wire c

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E2G0024-17-42 ¡ Semiconductor ¡ Semiconductor MSM514800C/CSL DESCRIPTION This MSM514800C/CSL version: Jan. 1998 Previous version: May 1997 524,288-

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