1480 Datasheet | Specifications & PDF Download

LM61495-Q1, LM61480-Q1, LM62460-Q1 SNVSBA0D – FEBRUARY 2020 – REVISED AUGUST 2021 LM62460-Q1, LM61480-Q1, and LM61495-Q1 Pin-Compatible 6-A/8-A/10-A A

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EVALUATION KIT AVAILABLE MAX14808 / MAX14809 Octal Three-Level/Quad Five-Level High-Voltage 2A Digital Pulsers with T/R Switch General Description T

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Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com

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2N1479, 2N1480, 2N1481, 2N1482 2N1479S, 2N1480S, 2N1481S, NPN Medium Power Silicon Transistor Rev. V3 Features • Available in JAN Quality Level per

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SD1480 RF & MICROWAVE TRANSISTORS VHF APPLICATIONS . . . . . . . 136 - 175 MHz 28 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION INTERNAL IN

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Ordering number:ENN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features ·

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Absolute maximum ratings　（Tc = 25℃ unless otherwise specified ） MOSFET Module Shindengen Electric Manufacturing Co., Ltd. Electrical and thermal char

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2ST1480 2ST2480 Complementary power transistors Preliminary data Features ■ ■ ■ ■ Very low collector-emitter saturation voltage High current gain ch

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isc Silicon NPN Power Transistor 2SD1480 DESCRIPTION ·Low Collector Saturation Voltage : VCE(sat)= 2.0V(Max)@ IC= 2A ·Collector-Emitter Breakdown Vo

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19-1940; Rev 0; 4/01 ±15kV ESD-Protected, Isolated RS-485/RS-422 Data Interfaces _________________General Description The MAX1480EA/MAX1480EC/MAX1490

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EVALUATION KIT AVAILABLE MAX14808 / MAX14809 Octal Three-Level/Quad Five-Level High-Voltage 2A Digital Pulsers with T/R Switch General Description T

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2N1479, 2N1480, 2N1481, 2N1482 2N1479S, 2N1480S, 2N1481S, NPN Medium Power Silicon Transistor Rev. V3 Features • Available in JAN Quality Level per

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Web page Sample & buy Tools & software Support & FAQ Document 482-1 Shielded Power Inductors – SLC1480 • Requires a mere quarter square inch of

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T500148004AQ Phase Control Thyristors FEATURES ·High surge current capability ·Low gate current ·Low VTM ·Minimum Lot-to-Lot variations for robust de

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High Current Power Inductor CSCM1480S Series Outline: Magnetic shielding structure, excellent resistance to electro magnetic interference. Flat wire c

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PNP Silicon AF Transistors BCW 67 BCW 68 For general AF applications q High current gain q Low collector-emitter saturation voltage q Complementary

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