CGHV14800F1 800W GaN Transistor
• Psat: 800 W
• DE: 65 %
• LSG: 14 dB
• S21: 18 dB
• S11: -12 dB
• S22: -5 dB
• Long pulse operation
Note: Features are typical performance vi.
The CGHV14800F1 typically achieves 800 W of saturated output power with 14 dB of large signal gain and 65% drain effici.
Image gallery
Download