CGHV14800F1 transistor equivalent, 800w gan transistor.
* Psat: 800 W
* DE: 65 %
* LSG: 14 dB
* S21: 18 dB
* S11: -12 dB
* S22: -5 dB
* Long pulse operation
Note: Features are typical performance vi.
The CGHV14800F1 typically achieves 800 W of saturated output power with 14 dB of large signal gain and 65% drain effici.
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