CGHV14500F hemt equivalent, gan hemt.
* Reference design amplifier 1.2 - 1.4 GHz Operation
* FET tuning range UHF through 1800 MHz
* 500 W Typical Output Power
* 16 dB Power Gain
* 68% Ty.
The transistor could be utilized for band specific applications ranging from 800 through 1600 MHz. The package options .
The CGHV14500 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14500 ideal for DC - 1.8 GHz L-Band radar amplifier applicati.
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