CGHV27030S hemt equivalent, gan hemt.
for 50 V in CGHV27030S-AMP1
* 2.5 - 2.7 GHz Operation
* 30 W Typical Output Power
* 20 dB Gain at 5 W PAVE
* -34 dBc ACLR at 5 W PAVE
* 30% efficien.
with frequencies of 700-960 MHz, 1200-1400 MHz, 1800-2200 MHz, 2500-2700 MHz, and 3300-3700 MHz at both 50 V and 28 V op.
The CGHV27030S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN HEMT devices are ideal for telecommunications applications with.
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