CGHV27100
CGHV27100 is GaN HEMT manufactured by Cree.
100 W, 2500-2700 MHz, 50 V, Ga N HEMT for LTE
Cree’s CGHV27100 is a gallium nitride (Ga N) high electron mobility transistor (HEMT) is designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27100 ideal for 2.5
- 2.7 GHz LTE, 4G Tele and BWA amplifier applications. The transistor is input matched and supplied in a ceramic/ metal pill and flange packages.
PNPa: Cck Ga Hg Ve2T7y1p0e0: F44a0n1d6C2Ga Hnd V2474100106P1
Typical Performance Over 2.5
- 2.7 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.5 GHz
2.6 GHz
2.7 GHz
Gain @ 44 d Bm
ACLR @ 44 d Bm
-37.0
-37.0
-37.0
Drain Efficiency @ 44 d Bm
Note: Measured in the CGHV27100-AMP amplifier circuit, under WCDMA 3GPP test model 1, 64 DPCH, 45% clipping, PAR = 7.5 d B @ 0.01% Probability on CCDF, VDD = 50 V, IDS = 500 m A.
Units d B d Bc %
Features
- 2.5
- 2.7 GHz Operation
- 18.0 d B Gain
- -37 d Bc ACLR at 25 W PAVE
- 33 % Efficiency at 25 W PAVE
- High Degree of DPD Correction Can be Applied
Rev 1.0
- May 2015
Subject to change without notice....
