CGHV27100 hemt equivalent, gan hemt.
* 2.5 - 2.7 GHz Operation
* 18.0 dB Gain
* -37 dBc ACLR at 25 W PAVE
* 33 % Efficiency at 25 W PAVE
* High Degree of DPD Correction Can be Applie.
The transistor is input matched and supplied in a ceramic/ metal pill and flange packages.
PNPa: CckGaHgVe2T7y1p0e0: F.
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