CGHV22100 hemt equivalent, gan hemt.
* 1.8 - 2.2 GHz Operation
* 20 dB Gain
* -35 dBc ACLR at 25 W PAVE
* 31-35 % Efficiency at 25 W PAVE
* High Degree of DPD Correction Can be Appli.
The transistor is input matched and supplied in a ceramic/ metal flange package.
PNPa: CckGaHgVe2T2y1p0e0: F44a0n1d6C2.
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