Title | GaN FETs 500W, GaN HEMT, 50V, 2.7-3.1GHz,Long-pulse, Flange |
Description | The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output ports. Utilizing the high performance, 0.4um GaN on SiC production process, the CGHV31500F1 operates from 2.7 to 3.1 GHz and supports both defense and commercial-related s-band radar applications. The CGHV31500F1 typically achieves 500 W of saturated output power with 11 dB of large signal gain and 60% ... |
Features |
• Psat: 500 W • DE: 60 % • LSG: 11 dB • S21: 13 dB • S11: -5 dB • S22: -6 dB • Long pulse operation Note: Features are typical performance under 25°C, pulsed operation. Please reference performance charts for additional information. Applications • S-band Radar MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make ch... |
Datasheet |
![]() |
Distributor |
![]() Mouser Electronics |
Stock | 25 In stock |
Price |
1 units: 716.32 USD 10 units: 691.37 USD
|
BuyNow |
![]() |
Distributor | Stock | Price | BuyNow |
---|---|---|---|
![]() Mouser Electronics |
1 units: 716.32 USD 10 units: 691.37 USD |
BuyNow |
|
![]() Verical |
1 units: 916.45 USD |
BuyNow |
|
![]() Richardson RFPD |
No price available |