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CGHV31500F1 - 500W GaN HPA

Description

The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output ports.

Utilizing the high performance, 0.4um GaN on SiC production process, the CGHV31500F1 operates from 2.7 to 3.1 GHz and supports both defense and commercial-related s-band radar applications.

Features

  • Psat: 500 W.
  • DE: 60 %.
  • LSG: 11 dB.
  • S21: 13 dB.
  • S11: -5 dB.
  • S22: -6 dB.
  • Long pulse operation Note: Features are typical performance under 25°C, pulsed operation. Please reference performance charts for additional information.

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CGHV31500F1 2.7 – 3.1 GHz, 500 W GaN HPA Description The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output ports. Utilizing the high performance, 0.4um GaN on SiC production process, the CGHV31500F1 operates from 2.7 to 3.1 GHz and supports both defense and commercial-related s-band radar applications. The CGHV31500F1 typically achieves 500 W of saturated output power with 11 dB of large signal gain and 60% drain efficiency under long pulse operation. Packaged in a thermally-enhanced, flange package, the CGHV31500F1 provides superior performance under long pulse operation allowing customers to improve SWaP-C benchmarks in their next-generation systems. Figure 1. CGHV31500F1 Figure 2.
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