HPA Datasheet | Specifications & PDF Download

XHRA-2HPA Datasheet 2016/11/04 XMOS © 2016, All Rights Reserved Document Number: X008627 XHRA-2HPA Datasheet 1 Table of Contents 1 xCORE-AUDIO P

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Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs 24-31 G

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HPAs Features Compact Design WR28 Output with Isolator PA Enable Thermal Monitoring and Gain Compensation Size: 5.0” x 4.51” x 1.145” Weight: 1.6 lbs

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Silicon N-Channel Power MOSFET HPA600R800DN ○R General Description： HPA600R800DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPA650R1K1DN ○R General Description： HPA650R1K1DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPA650R700DN ○R General Description： HPA650R700DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET ○R HPA800R1K4PD-G General Description： HPA800R1K4PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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Silicon N-Channel Power MOSFET HPA600R1K6DN ○R General Description： HPA600R1K6DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPA600R2K3DN ○R General Description： HPA600R2K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPA600R550DN ○R General Description： HPA600R550DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPA650R1K3DN ○R General Description： HPA650R1K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPA650R1K9DN ○R General Description： HPA650R1K9DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPA650R900DN ○R General Description： HPA650R900DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPA700R1K3SA ○R General Description： HPA700R1K3SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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Silicon N-Channel Power MOSFET HPA600R760MB General Description： HPA600R760MB, the silicon N-channel Enhanced MOSFETs, is obtained by the super junct

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MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHPA19010/D The RF Line PCS Band RF Linear LDMOS Ampli

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MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA Order this document by MHPA21010/D The RF Line UMTS Band RF Linear LDMOS Ampl

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www.DataSheet4U.com Advance Product Information February 1, 2006 Wideband 1 W HPA with AGC Key Features • • • • • • • • • TGA2509 Frequency Range:

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA MOTOROLA The RF Line Freescale Semiconductor, Inc. Order this document by MHPA18010/D CDMA Band R

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Advance Product Information www.DataSheet4U.com Aug 16, 2005 5.6 Watt 3.5GHz Packaged HPA Key Features • • • • • • • • • • • TGA2925-SG 3.5 GHz Appl

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