HPA Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET ○R HPA600R120PC-G General Description： HPA600R120PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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Silicon N-Channel Power MOSFET ○R HPA600R160PF-G General Description： HPA600R160PF-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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w WM9712L AC’97 Audio and Touchpanel CODEC DESCRIPTION The WM9712L is a highly integrated input / output device designed for mobile computing and c

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CMPA0560008S 0.5 – 6 GHz, 10 W GaN HPA Description The CMPA0560008S is a 10W packaged MMIC HPA utilizing the high performance, 0.15um GaN on SiC produ

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Silicon N-Channel Power MOSFET HPA650R420SA ○R General Description： HPA650R420SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super j

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Silicon N-Channel Power MOSFET ○R HPA600R600PC-G General Description： HPA600R600PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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Silicon N-Channel Power MOSFET ○R HPA800R750PD-G General Description： HPA800R750PD-G, the silicon N-channel Enhanced MOSFETs, is obtained by the su

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Silicon N-Channel Power MOSFET HPA600R700DN ○R General Description： HPA600R700DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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1 WM9713L AC’97 Audio + Touchpanel CODEC DESCRIPTION The WM9713L is a highly integrated input/output device designed for mobile computing and commu

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www.datasheet4u.com A d v a n c e d R e l e a s e FEATURES 1215 - 1400 MHz 11.5 dB Gain Typ Status Indicators Amplitude Tracking ±0.9 Phase Trackin

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CMPA801B030D1 8 – 11 GHz, 40 W GaN HPA Description The CMPA801B030D1 is a 40 W MMIC HPA utilizing the high performance, 0.15 um GaN on SiC production

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HPAs Features Compact Design WR28 Output with Isolator PA Enable Thermal Monitoring and Gain Compensation Size: 5.0” x 4.51” x 1.145” Weight: 1.6 lbs

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Silicon N-Channel Power MOSFET HPA600R2K3DN ○R General Description： HPA600R2K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the dou

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Silicon N-Channel Power MOSFET HPA600R760MB General Description： HPA600R760MB, the silicon N-channel Enhanced MOSFETs, is obtained by the super junct

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CHZ180A-SEB 180W L-Band HPA GaN HEMT on SiC in SEB Package Description The CHZ180A-SEB is an input matched and output pre-matched packaged Gallium Ni

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www.DataSheet4U.com Advance Product Information February 1, 2006 Wideband 1 W HPA with AGC Key Features • • • • • • • • • TGA2509 Frequency Range:

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Not Recommended for New Designs Product Data Sheet November 19, 2003 TGA4501-SCC TriQuint Recommends the TGA4505-EPU be used for New Designs 24-31 G

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