HPA600R2K3DN Datasheet, Mosfet, HUAJING MICROELECTRONICS

HPA600R2K3DN Features

• Mosfet l Superior switching performance l Low on resistance(Rdson≤2.3Ω) l Low gate charge (Typical Data:11.5nC) l Low reverse transfer capacitances(Typical:5.8pF) l 100% Single pulse avalanch

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HPA600R2K3DN

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HUAJING MICROELECTRONICS

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📄 Datasheet

Description:

Silicon n-channel power mosfet. HPA600R2K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction l

HPA600R2K3DN Application

• Applications Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a

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HPA600R2K3DN

HUAJING MICROELECTRONICS

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