Datasheet Details
- Part number
- HPA600R1K0DN
- Manufacturer
- HUAJING MICROELECTRONICS
- File Size
- 390.64 KB
- Datasheet
- HPA600R1K0DN-HUAJINGMICROELECTRONICS.pdf
- Description
- Silicon N-Channel Power MOSFET
HPA600R1K0DN Description
Silicon N-Channel Power MOSFET HPA600R1K0DN ○R General .
HPA600R1K0DN, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the double-shield Technology
which reduce the conduction loss, improve swit.
HPA600R1K0DN Applications
* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
IDMa1 VGS EAS a2 dv/dt a3
PD
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu
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