HPA600R1K0DN Datasheet - HUAJING MICROELECTRONICS

HPA600R1K0DN, Silicon N-Channel Power MOSFET

Silicon N-Channel Power MOSFET HPA600R1K0DN ○R General .
HPA600R1K0DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve swit.

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Datasheet Details

Part number:

HPA600R1K0DN

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

390.64 KB

Description:

Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dt a3 PD TJ，Tstg TL Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pu

HPA600R1K0DN Distributors

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HPA600R1K0DN Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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