HPA600R160PF-G Datasheet - CR Micro

HPA600R160PF-G Silicon N-Channel Power MOSFET

HPA600R160PF-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher.

HPA600R160PF-G Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test l Halogen Free 650 V 20 A 33 W 0.13 Ω 6.2 uJ Applications： Power switch circuit of adaptor,PC power and server. Absolute（Tj= 25℃ unless otherwise specified）： Symbol Paramete

HPA600R160PF-G Datasheet (514.00 KB)