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HPA650R099PF-G Silicon N-Channel Power MOSFET

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Description

Silicon N-Channel Power MOSFET ○R HPA650R099PF-G General .
HPA650R099PF-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switc.

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Datasheet Specifications

Part number
HPA650R099PF-G
Manufacturer
CR Micro
File Size
517.74 KB
Datasheet
HPA650R099PF-G-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

Applications

* PC、Server power. Absolute(TJ= 25℃ unless otherwise specified): Symbol Parameter VDSS ID a1 IDMa2 VGSS EAS a3 dv/dt a4 dv/dt dif/dt PD TJ,Tstg TL Drain-to-Source Voltage(VGS=0V) Continuous Drain Current(Tc=25°C) Pulsed Drain Current(Tc=25°C) Gate-to-Source Voltage Single Pulse Avalanche Energy Pe

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