Datasheet4U Logo Datasheet4U.com

HPA650R900DN

Silicon N-Channel Power MOSFET

HPA650R900DN Features

* l Superior switching performance l Low on resistance(Rdson≤0.9Ω) l Low gate charge (Typical Data:25.4nC) l Low reverse transfer capacitances(Typical:23pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specifie

HPA650R900DN General Description

HPA650R900DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

HPA650R900DN Datasheet (400.65 KB)

Preview of HPA650R900DN PDF

Datasheet Details

Part number:

HPA650R900DN

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

400.65 KB

Description:

Silicon n-channel power mosfet.

📁 Related Datasheet

HPA650R099PF-G Silicon N-Channel Power MOSFET (CR Micro)

HPA650R190PC-G Silicon N-Channel Power MOSFET (CR Micro)

HPA650R1K1DN Silicon N-Channel Power MOSFET (HUAJING MICROELECTRONICS)

HPA650R1K3DN Silicon N-Channel Power MOSFET (HUAJING MICROELECTRONICS)

HPA650R1K9DN Silicon N-Channel Power MOSFET (HUAJING MICROELECTRONICS)

HPA650R2K8DN Silicon N-Channel Power MOSFET (HUAJING MICROELECTRONICS)

HPA650R300PC-G Silicon N-Channel Power MOSFET (CR Micro)

HPA650R420PC-G Silicon N-Channel Power MOSFET (CR Micro)

HPA650R420SA Silicon N-Channel Power MOSFET (HUAJING MICROELECTRONICS)

HPA650R600SA Silicon N-Channel Power MOSFET (HUAJING MICROELECTRONICS)

TAGS

HPA650R900DN Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

Image Gallery

HPA650R900DN Datasheet Preview Page 2 HPA650R900DN Datasheet Preview Page 3

HPA650R900DN Distributor