HPA650R2K8DN Datasheet, Mosfet, HUAJING MICROELECTRONICS

✔ HPA650R2K8DN Features

l Superior switching performance l Low on resistance(Rdson≤2.8Ω) l Low gate charge (Typical Data:12.8nC) l Low reverse transfer capacitances(Typical:7.5pF) l 100% Single

✔ HPA650R2K8DN Application

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

PDF File Details

HUAJING MICROELECTRONICS manufacturer logo

Part number:

HPA650R2K8DN

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

395.58 KB

Download:

📄 Datasheet

Description:

Silicon n-channel power mosfet. HPA650R2K8DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction l

📥 Download PDF (395.58 KB)

📁 Related Datasheet

HPA650R099PF-G - Silicon N-Channel Power MOSFET (CR Micro)

HPA650R190PC-G - Silicon N-Channel Power MOSFET (CR Micro)

HPA650R1K1DN - Silicon N-Channel Power MOSFET (HUAJING MICROELECTRONICS)

HPA650R1K3DN - Silicon N-Channel Power MOSFET (HUAJING MICROELECTRONICS)

HPA650R1K9DN - Silicon N-Channel Power MOSFET (HUAJING MICROELECTRONICS)

HPA650R300PC-G - Silicon N-Channel Power MOSFET (CR Micro)

HPA650R420PC-G - Silicon N-Channel Power MOSFET (CR Micro)

HPA650R420SA - Silicon N-Channel Power MOSFET (HUAJING MICROELECTRONICS)

TAGS

HPA650R2K8DN Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS