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HPA600R280PC-G Silicon N-Channel Power MOSFET

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Description

Silicon N-Channel Power MOSFET ○R HPA600R280PC-G General .
HPA600R280PC-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switc.

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Datasheet Specifications

Part number
HPA600R280PC-G
Manufacturer
CR Micro
File Size
520.98 KB
Datasheet
HPA600R280PC-G-CRMicro.pdf
Description
Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor ,PC and LED power. Absolute(Tj= 25℃ unless otherwise specified): Symbol Parameter VDSS ID a1 IDMa2 VGSS EAS a3 dv/dt a4 dv/dt dif/dt PD TJ,Tstg TL Drain-to-Source Voltage(VGS=0V) Continuous Drain Current TC = 25 °C Pulsed Drain Current TC = 25 °C Gate-to-Source V

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