HPA600R1K6DN Datasheet - HUAJING MICROELECTRONICS

HPA600R1K6DN Silicon N-Channel Power MOSFET

HPA600R1K6DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

HPA600R1K6DN Features

* l Superior switching performance l Low on resistance(Rdson≤1.6 Ω) l Low gate charge (Typical Data:12.8nC) l Low reverse transfer capacitances(Typical:10.6pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise speci

HPA600R1K6DN-HUAJINGMICROELECTRONICS.pdf