Datasheet Details
- Part number
- HPA600R760MB
- Manufacturer
- HUAJING MICROELECTRONICS
- File Size
- 370.69 KB
- Datasheet
- HPA600R760MB-HUAJINGMICROELECTRONICS.pdf
- Description
- Silicon N-Channel Power MOSFET
HPA600R760MB Description
Silicon N-Channel Power MOSFET HPA600R760MB General .
HPA600R760MB, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switchi.
HPA600R760MB Applications
* Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）：
○R
650 V 5.5 A 20 W 0.70 Ω
Symbol
VDSS ID a1 IDMa2 VGSS EAS a3 dv/dt a4
PD TJ，Tstg
TL
Parameter
Drain-to-Source Voltage(VGS=0V)
Continuous Drain Current TC = 25 °C Pulsed Drain Current TC = 25 °C Gate-to-S
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