HPA600R760MB Silicon N-Channel Power MOSFET

HUAJING MICROELECTRONICS

Description

Silicon N-Channel Power MOSFET HPA600R760MB General .
HPA600R760MB, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switchi.

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Datasheet Specifications

Part number: HPA600R760MB
Manufacturer: HUAJING MICROELECTRONICS
File Size: 370.69 KB
Datasheet: HPA600R760MB-HUAJINGMICROELECTRONICS.pdf
Description: Silicon N-Channel Power MOSFET

Applications

* Power switch circuit of adaptor and charger. Absolute（Tj= 25℃ unless otherwise specified）： ○R 650 V 5.5 A 20 W 0.70 Ω Symbol VDSS ID a1 IDMa2 VGSS EAS a3 dv/dt a4 PD TJ，Tstg TL Parameter Drain-to-Source Voltage(VGS=0V) Continuous Drain Current TC = 25 °C Pulsed Drain Current TC = 25 °C Gate-to-S

HPA600R760MB Distributors

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HPA600R760MB Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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