HPA650R1K3DN Datasheet - HUAJING MICROELECTRONICS

Silicon N-Channel Power MOSFET

HPA650R1K3DN Features

* l Superior switching performance l Low on resistance(Rdson≤1.3Ω) l Low gate charge (Typical Data:16.6nC) l Low reverse transfer capacitances(Typical:16.4pF) l 100% Single pulse avalanche energy test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specif

HPA650R1K3DN General Description

HPA650R1K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and hi.

HPA650R1K3DN Datasheet (413.12 KB)

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Part number:

HPA650R1K3DN

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

413.12 KB

Description:

Silicon n-channel power mosfet.

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HPA650R1K3DN Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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HPA650R1K3DN Features

HPA650R1K3DN General Description

Datasheet Details

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HPA650R1K3DN Distributor