HPA650R1K3DN Datasheet, Mosfet, HUAJING MICROELECTRONICS

✔ HPA650R1K3DN Features

l Superior switching performance l Low on resistance(Rdson≤1.3Ω) l Low gate charge (Typical Data:16.6nC) l Low reverse transfer capacitances(Typical:16.4pF) l 100% Singl

✔ HPA650R1K3DN Application

Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： Symbol Paramet

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HPA650R1K3DN

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HUAJING MICROELECTRONICS

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📄 Datasheet

Description:

Silicon n-channel power mosfet. HPA650R1K3DN, the silicon N-channel Enhanced VDMOSFETs, is obtained by the double-shield Technology which reduce the conduction l

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HPA650R1K3DN Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS