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HPA650R420SA Datasheet - HUAJING MICROELECTRONICS

HPA650R420SA Silicon N-Channel Power MOSFET

HPA650R420SA, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction technology which reduces the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher e.

HPA650R420SA Features

* l Fast Switching l Low Gate Charge l Low Reverse transfer capacitances l 100% Single Pulse avalanche energy Test Applications： Power switch circuit of adaptor and charger. Absolute（Tc= 25℃ unless otherwise specified）： 650 V 11 A 30 W 0.35 Ω Symbol Parameter VDSS ID IDMa1 VGS EAS a2 dv/dta3 PD TJ

HPA650R420SA Datasheet (336.01 KB)

Preview of HPA650R420SA PDF

Datasheet Details

Part number:

HPA650R420SA

Manufacturer:

HUAJING MICROELECTRONICS

File Size:

336.01 KB

Description:

Silicon n-channel power mosfet.

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HPA650R420SA Silicon N-Channel Power MOSFET HUAJING MICROELECTRONICS

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