CGHV14250 - GaN HEMT

Wolfspeed

CGHV14250 Datasheet Preview — Preview of CGHV14250 PDF

Datasheet Details

Part number	CGHV14250
Manufacturer	Wolfspeed
File Size	1.82 MB
Description	GaN HEMT
Datasheet	CGHV14250-Wolfspeed.pdf

CGHV14250 Product details

Description

Wolfspeed’s CGHV14250 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14250 ideal for DC - 1.6 GHz L-Band radar amplifier applications.

Features

Reference design amplifier 1.2 - 1.4 GHz Operation.
FET Tuning range UHF through 1800 MHz.
330 W Typical Output Power.
18 dB Power Gain.
77 % Typical Drain Efficiency.
< 0.3 dB Pulsed Amplitude Droop.
Internally pre-matched on input, unmatched output Large Signal Models Available for ADS and MWO Rev. 3.0, 2022-9-30 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed.

📁 CGHV14250 Similar Datasheet

CGHV14500 - GaN HEMT (Cree)
CGHV14500F - GaN HEMT (MACOM)
CGHV14800 - GaN HEMT (Cree)
CGHV14800F - GaN HEMT (Cree)
CGHV1F006S - GaN HEMT (Cree)
CGHV1F025S - GaN HEMT (MACOM)
CGHV22100 - GaN HEMT (Cree)
CGHV22200 - GaN HEMT (Cree)

Other Datasheets by Wolfspeed

CGHV14800F1 - 800W GaN Transistor
CGHV1J006D - GaN HEMT Die
CGHV1J025D - GaN HEMT Die
CGHV1J070D - GaN HEMT Die
CGHV27015S - GaN HEMT
CGHV31500F1 - 500W GaN HEMT

Published: Dec 6, 2024 |