Datasheet Details
| Part number | CGHV1J025D |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 839.24 KB |
| Description | GaN HEMT Die |
| Datasheet | CGHV1J025D-Wolfspeed.pdf |
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Overview: CGHV1J025D 25 W, 18.0 GHz, GaN HEMT Die.
| Part number | CGHV1J025D |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 839.24 KB |
| Description | GaN HEMT Die |
| Datasheet | CGHV1J025D-Wolfspeed.pdf |
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|
|
Cree’s CGHV1J025D is a high voltage gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on a silicon carbide substrate, using a 0.25 μm gate length fabrication process.
This GaN-on-SiC product offers superior high frequency, high efficiency
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