14N03L Datasheet | Specifications & PDF Download

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BSC014N03LS G-VB BSC014N03LS G-VB Datasheet N-Channel 30 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0018 at VGS = 10 V

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Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for targ

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Preliminary data IPU14N03L OptiMOSâ Power-Transistor Buck converter series Feature Product Summary VDS RDS(on) ID 30 14.4 30 P-TO251 N-Channel

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IPD14N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) ID 30 13.5 30 P- TO252 -3-11 V mΩ A • Logic Level • Low On

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Type OptiMOS™3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JED

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IPD14N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) ID 30 13.5 30 P- TO252 -3-11 V mΩ A • Logic Level • Low On

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IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excelle

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www.DataSheet4U.com IPB14N03LA G OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) fo

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() CRSM014N03L6 SkyMOS6 N-MOSFET 30V, 1.1mΩ, 80A Features • Uses CRM(CQ) advanced SkyMOS6 technology • Extremely low on-resistance RDS(on) • Excelle

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114N03L-VB TO220 114N03L-VB TO220 Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on) ()

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HYG014N03LR1P/B Feature  30V/275A RDS(ON)=1.3mΩ(typ.)@VGS = 10V RDS(ON)=1.6mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-

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HYG014N03LR1P/B Feature  30V/275A RDS(ON)=1.3mΩ(typ.)@VGS = 10V RDS(ON)=1.6mΩ(typ.)@VGS = 4.5V  100% Avalanche Tested  Reliable and Rugged  Lead-

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IPB14N03LA IPI14N03LA, IPP14N03LA OptiMOS®2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • N-channel • Logic level • Excelle

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MOSFET Metal Oxide Semiconductor Field Effect Transistor Bare Die OptiMOS™3 Power MOS Transistor Chip IPC014N03L3 Data Sheet Rev. 2.5 Final Industrial

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