1510 Datasheet | Specifications & PDF Download

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BRIDGE RECTIFIER RoHS GBJ15005 Thru GBJ1510 15.0 Amps FEATURES • UL Recognized • Current 15 Amps • Voltage Range 50V ~ 1000V • Glass passivated chi

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SEMICONDUCTOR TECHNICAL DATA GBJ15005 ~ GBJ1510 Bridge Rectifier ■ Features ● Io 15A ● VRRM 50V~1000V ● Glass passivated chip ● High surge for

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HD151011 Dual BCD Programmable Counter with Synchronous Preset Enable ADE-205-100(Z) Rev 0 April 1995 The HD151011 has BCD decimal two digits down co

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POWER PLUG 15W AC/DC POWER SUPPLY REV. 01 FEATURES s PRIMARY SWITCHED WALL PLUG-IN power supply s FIXED INPUT VOLTAGE 230Vac ±15% s s s s s s s s s

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GBJ15005 THRU GBJ1510 GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT 15.0 Amperes GBJ FEATURES • Plastic material

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Taiwan Goodark Technology Co.,Ltd B426-AB1510 Revision History Version 0.10 0.20 Change Summary Created Update Bluetooth Specification Version Dat

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www.DataSheet4U.com China Electronics Technology Group Corporation No.26 Research Institute 151.8MHz High-Loss SAW Filter 8.1MHz Bandwidth Part Numb

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www.DataSheet4U.com DC COMPONENTS CO., LTD. R RECTIFIER SPECIALISTS BR1505L THRU BR1510L TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE R

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Schottky Barrier Rectifier FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv

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Thick Film Chip Resistor 0603 Features •  Small size and light weight •  Suitable for both wave and reflow soldering •  Reduction of assembly costs

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NCP51510, NCV51510 3 Amp VTT Termination Source / Sink Regulator for DDR, DDR-2, DDR-3, DDR-4 The NCP51510 is a source/sink Double Data Rate (DDR) te

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® WON-TOP ELECTRONICS KBP150 – KBP1510 1.5A SINGLE PHASE BRIDGE RECTIFIER Pb Features  Diffused Junction  Low Forward Voltage Drop  High Current

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M P 1 5 0 5W THRU SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 15 Amperes M P 1 5 1 0W FEATURES *

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UF1505 THRU UF1510 1.5A Leaded Type Ultra Fast Rectifiers ■ Features • Axial lead type devices for through hole design. • High current capability. •

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PGT 201 30 1510 nm DFB Laser for Supervisory Channel Applications Key Features • 1510 nm DFB laser source • Operating temperature 0 °C to +70 °C • L

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P1510ATG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 15mΩ @VGS = 10V ID 64A TO-220 ABSOLUTE MAXIMUM RATINGS (TA =

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