Preliminary Technical Information
XPTTM 650V IGBT GenX3TM
Extreme Light Punch Through IGBT for 20-60kHz Switching
IXYP15N65C3
VCES = 650V IC110 = 1
(34 views)
15N65C3 (Infineon Technologies)
Power Transistor
SPA15N65C3
CoolMOSTM Power Transistor
Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1
(27 views)
IXYP15N65C3D1M (IXYS)
IGBT
XPTTM 650V IGBT GenX3TM w/Diode
(Electrically Isolated Tab)
Preliminary Technical Information
IXYP15N65C3D1M
VCES = 650V IC110 = 9A VCE(sat) ï€ ï€ ï‚£ ï€ 2
(25 views)
SPI15N65C3 (INCHANGE)
N-Channel MOSFET
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche
(25 views)
IXYA15N65C3D1 (IXYS)
IGBT
Preliminary Technical Information
XPTTM 650V IGBT GenX3TM w/Diode
IXYA15N65C3D1 IXYP15N65C3D1
Extreme Light Punch Through IGBT for 20-60kHz Switchi
(24 views)
IXYP15N65C3D1 (IXYS)
IGBT
Preliminary Technical Information
XPTTM 650V IGBT GenX3TM w/Diode
IXYA15N65C3D1 IXYP15N65C3D1
Extreme Light Punch Through IGBT for 20-60kHz Switchi
(21 views)
SPA15N65C3 (Infineon Technologies)
Power Transistor
SPA15N65C3
CoolMOSTM Power Transistor
Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1
(14 views)
SPP15N65C3 (Infineon Technologies)
Power Transistor
CoolMOSTM Power Transistor
Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target
(13 views)
SPA15N65C3 (INCHANGE)
N-Channel MOSFET
Isc N-Channel MOSFET Transistor
·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100%
(13 views)
SPI15N65C3 (Infineon Technologies)
CoolMOSTM Power Transistor
SPI15N65C3
CoolMOSTM Power Transistor
Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1
(10 views)
