15N65C3 Datasheet | Specifications & PDF Download

SPA15N65C3 CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1

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XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) Preliminary Technical Information IXYP15N65C3D1M VCES = 650V IC110 = 9A VCE(sat)  2

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche

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CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target

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SPI15N65C3 CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1

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SPA15N65C3 CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1

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Isc N-Channel MOSFET Transistor ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100%

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYA15N65C3D1 IXYP15N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switchi

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM w/Diode IXYA15N65C3D1 IXYP15N65C3D1 Extreme Light Punch Through IGBT for 20-60kHz Switchi

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Preliminary Technical Information XPTTM 650V IGBT GenX3TM Extreme Light Punch Through IGBT for 20-60kHz Switching IXYP15N65C3 VCES = 650V IC110 = 1

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