* Optimized for 20-60kHz Switching
* Plastic Overmolded Tab for Electrical Isolation
* Square RBSOA
* Avalanche Rated
* Anti-Parallel Fast Diode
* Short Circuit Capability Advantages
* High Power Density
* Extremely Rugged
* Low Gate Drive Requirement Applications
IXYP15N65C3D1M Datasheet (190.13 KB)
IXYP15N65C3D1M
IXYS
190.13 KB
Igbt.
XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) Preliminary Technical Information IXYP15N65C3D1M VCES = 650V IC110 = 9A VCE(sat) 2.
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