IXYP15N65C3D1M Datasheet - IXYS

IXYP15N65C3D1M IGBT

XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) Preliminary Technical Information IXYP15N65C3D1M VCES = 650V IC110 = 9A VCE(sat)  2.5V tfi(typ) = 28ns Extreme Light Punch Through IGBT for 20-60kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IIFC1M10 IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C TC = 110°C TTCC = 110°C = 25°C, 1ms TC = 25°C TC = 25°C .

IXYP15N65C3D1M Features

* Optimized for 20-60kHz Switching

* Plastic Overmolded Tab for Electrical Isolation

* Square RBSOA

* Avalanche Rated

* Anti-Parallel Fast Diode

* Short Circuit Capability Advantages

* High Power Density

* Extremely Rugged

* Low Gate Drive Requirement Applications

IXYP15N65C3D1M-IXYS.pdf