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IXYP15N65C3D1M IGBT

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Description

XPTTM 650V IGBT GenX3TM w/Diode (Electrically Isolated Tab) Preliminary Technical Information IXYP15N65C3D1M VCES = 650V IC110 = 9A VCE(sat)  2.

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Datasheet Specifications

Part number
IXYP15N65C3D1M
Manufacturer
IXYS
File Size
190.13 KB
Datasheet
IXYP15N65C3D1M-IXYS.pdf
Description
IGBT

Features

* Optimized for 20-60kHz Switching
* Plastic Overmolded Tab for Electrical Isolation
* Square RBSOA
* Avalanche Rated
* Anti-Parallel Fast Diode
* Short Circuit Capability Advantages
* High Power Density
* Extremely Rugged

Applications

* Power Inverters
* UPS
* Motor Drives
* SMPS
* PFC Circuits
* Battery Chargers
* Welding Machines
* Lamp Ballasts
* High Frequency Power Inverters © 2014IXYS CORPORATION, All Rights Reserved DS100549B(7/14) Symbol Test Conditions (TJ = 25°C Unless Otherwise S

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